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Unique Selling Proposition
Leading the Future with Rare-Earth Ion-Doped Photonic Technology
001
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High Performance
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
002
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Low Cost
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
003
/ 006_
Scalable
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
004
/ 006_
Multi Lane
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
005
/ 006_
Compact
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
006
/ 006_
Extended Range
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
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Unique Propositions
Powering Next-Gen Connectivity with Rare-Earth Photonic Circtuis
001
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High Performance
Featuring 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
002
/ 006_
Low Cost
Wafer-scale fabrication and flexible integration of passive and active photonic components enable cost-efficient, high-volume production.
003
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Scalable
Monolithic integration with silicon photonics foundry process allowing large volume wafer scale fabrication.
004
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Multi Lane
Integration of multiple amplifier lanes on a single photonic chip for massively parallel applications.
005
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Compact
Ultra-compact, chip-scale amplifiers with mm² footprints.
006
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Extended Range
Possibility to incorporate other ions to address a wide range of wavelengths.
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Unique Selling Proposition
Leading the Future with Rare-Earth Ion-Doped Photonic Technology
.png)
.png)
001
/ 006_
High Performance
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
002
/ 006_
Low Cost
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
003
/ 006_
Scalable
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
004
/ 006_
Multi Lane
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
005
/ 006_
Compact
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
006
/ 006_
Extended Range
The device features 30 dB on-chip gain, 300 mW on-chip output power, a low noise figure (<5 dB), and temperature-insensitive gain.
Redefining Optical Networks with On-Chip Erbium-Doped Amplifiers
EDWATEC, a Swiss high-tech startup company, is an integrated device manufacturer (IDM) offering rare-earth ion-doped photonic integrated circuits.
EDWATEC specializes in providing tailored solutions through its proprietary Er-doped PIC technology for compact, scalable, and high-performance optical amplifiers and lasers. Our distinct advantage lies in access to state-of-the-art nano-fabrication facilities combined with our team’s expertise in photonics design and measurement.
